At this time, Xia Peisu, who had not spoken, said: "Mr. Pang, what do you mean is that the future development direction of Starring Technology is to develop a brand new Internet terminal, and rely on this terminal to support a brand new system and instruction set architecture system, and form an ecological closed loop?"

Pang Xuelin nodded with a smile and said, "That's right, that's what it means."

Xia Peisu frowned and said, "If this were the case, during that period, HiSilicon Semiconductor would only have input and no output. How long can you last?"

Pang Xuelin smiled slightly and said, "This is not difficult. Warwick is preparing to enter the mobile communications operator business next. There are many chips that need to be purchased from abroad. HiSilicon Semiconductor can undertake the research and development of some chips such as dsp chips, asi chips, fpga chips, etc. In addition, in the consumer business field, we are also preparing to make flash storage and second-generation synchronous dynamic random access memory."

"Flash storage? Second generation synchronous dynamic random access memory?"

Xia Peisu and Ni Guangnan looked at each other and were both surprised.

Flash storage refers to flash storage.

In this era, neither of these technologies has yet to be fully mature.

In 1984, Toshiba's Fujio Masaoka was first proposed the concept of fast flash memory.

Unlike traditional computer memory, flash memory is characterized by non-volatile and its recording speed is also very fast.

Intel is the first company in the world to produce flash memory and put it on the market.

In 1988, Intel launched a 256k bit flash memory chip.

It is the same size as a shoe box and is embedded in a recorder.

Later, this type of flash memory invented by Intel was collectively called Nor flash memory. It combines two technologies: EPR (eraseable programmable read-only memory) and EEPR (electrically erasable programmable read-only memory) and has a SRAM interface.

epr means that the contents can be erased by special means and then re-written.

Its basic unit circuit (storage cells) often uses a floating gate avalanche injection mos circuit, referred to as famos for short.

It is similar to the Mos circuit, and two high-concentration p-type regions are grown on an n-type substrate, and the source s and drain d are drawn through ohmic contact.

There is a polysilicon gate between the source and drain floating in the sio2 insulating layer, and there is no direct electrical connection to the surrounding area.

This circuit indicates whether the floating gate is charged or not. After the floating gate is charged (such as negative charge), it is below it. A positive conductive channel is induced between the source and drain, so that the Mos tube is turned on, which means that the storage of 0 is stored.

If the floating gate is not charged, no conductive channel is formed, and the mos tube is not conductive, which means that 1 is stored.

The working principle of the EEPR basic memory cell circuit is similar to that of EPR. It generates a floating gate on top of the floating gate of the EPR basic cell circuit. The former is called the first-stage floating gate and the latter is called the second-stage floating gate.

An electrode can be drawn to the second floating gate so that the second floating gate is connected to a certain voltage vg.

If vg is a positive voltage, a tunneling effect occurs between the first floating gate and the drain, causing electrons to be injected into the first floating gate, that is, programming and writing.

If vg is made to a negative voltage, the electrons in the first-stage floating gate are dissipated, that is, erased. After erasing, it can be re-written.

The basic unit circuit of flash memory, similar to EEPR, is also composed of double-layer floating gate Mos tubes.

However, the first layer of gate dielectric is very thin, serving as a tunnel oxide layer.

The writing method is the same as that of eepr, and a positive voltage is applied to the second level of floating gate, so that electrons enter the first level of floating gate.

The readout method is the same as EPR. The erasing method is to apply a positive voltage at the source to use the tunneling effect between the first stage floating gate and the source to attract the negative charge injected into the floating gate to the source.

Since the source is applied to the positive voltage, the sources of each cell are connected together, so that the flash memory cannot be erased by bytes, but is erased in full or in blocks.

Compared with the first type of nor flash memory.

The second type of flash memory is called nand flash memory.

It was developed by Hitachi in 1989 and is considered an ideal replacement for Nor flash memory.

The write cycle of nand flash memory is 90% shorter than that of nor flash memory, and its storage and deletion processing speed is also relatively fast.

Nand's storage unit is only half of Nor's, and Nand gets better performance in smaller storage space.

The difference between nor type and Nand type flash memory is very big.

For example, nor type flash memory is more like memory, with independent address lines and data lines, but it is more expensive and has a smaller capacity.

The Nand type is more like a hard disk. The address line and data line are shared I/O lines. All information similar to the hard disk is transmitted through a hard disk line. Moreover, compared with the Nor type flash memory, the Nand type is less expensive and has a much larger capacity.

Therefore, Nor-type flash memory is more suitable for frequent random reading and writing occasions. It is usually used to store program code and run directly in flash memory. Mobile phones are large users who use Nor-type flash memory, so the "memory" capacity of mobile phones is usually not large; Nand-type flash memory is mainly used to store information, such as flash disks and digital memory cards.

Xia Peisu frowned and said, "Mr. Pang, I remember that the market for flash memory is not large now, and its application range is very narrow. Moreover, the technology is mainly controlled by major manufacturers such as Samsung, Hitachi, Intel, etc. Can you make money by doing this?"

Pang Xuelin laughed and said, "Academician Xia, don't worry, the flash memory market is probably much bigger than you think! Some things involve commercial secrets, and I can't disclose them to you for the time being, but I can guarantee that just one flash memory is enough to make HiSilicon Semiconductor eat a lot.

Xia Peisu and Ni Guangnan looked at each other, a little surprised at Pang Xuelin's confidence.

Pang Xuelin didn't care about the ideas of these two bigwigs, and he was not worried about flash memory at all.

Not to mention the mobile phone memory in later generations, the U disk that will appear in four years is enough to support the development of HiSilicon.

In the development of the world's computer industry, storage devices have always been the key to the development of computers. In the earliest computers did not have storage devices, used paper jams, and then replaced them with tapes. In the future, storage devices finally appeared. This is a floppy disk. The more common one is a 3.5-inch floppy disk, which is commonly known as a disk. Later, there is finally a CD. Whether it is a CD, it is the most common storage device within a considerable time range.

However, the characteristic of single-use CDs has also criticized everyone for being criticized.

Finally, in 1998, the U disk appeared. Because of its large capacity, it can be used repeatedly and plugged and unplugged at will, making it the most popular mobile storage device. Until the 1920s and 1930s, it was the most popular mobile data transmission method in the world.

U disks were first derived from China's Langke Technology, and this achievement is also regarded as the only original invention patent achievement belonging to Chinese in the field of computer storage for 20 years.

However, Langco owns a patent for "U disk", but not a patent for USB flash memory or USB memory.

Because of this, in the real world, although Langko can earn tens of millions of revenue every year through patent lawsuits, it has not developed.

Until Pang Xuelin entered the Chinese Sun World, Langko still made money by fighting patent lawsuits and renting a house, which was a complete insult to a technology company.

Therefore, Pang Xuelin did not plan to leave the U disk patent to the future Langko.

Just a few months ago, Pang Xuelin had already applied for the USB patent through Scooper in the United States.

The usb interface is one of the most common interfaces for peripheral devices to connect to computer hosts.

In addition to the USB interface, there are also interfaces such as parallel buses.

However, the USB interface has a great advantage that makes it very popular in this field, that is, devices with this interface can be plug-and-play on computers (plug-and-play is sometimes called hot plug-and-play).

When the computer is turned on, you must first turn on the peripheral device and then turn on the mains power supply, and the order of shutdown is exactly the opposite.

The reason for following this boot sequence is that before the computer starts, all peripheral devices must be powered on and ready to be powered on, and then wait for the host to check these devices one by one and install the corresponding software.

Only in this way can the computer run normally, otherwise the peripheral device may be unavailable or the computer cannot recognize the peripheral device.

The emergence of the USB interface has changed this situation. If a device is a USB interface, it can be plugged into the computer host at any time, no matter what state the computer is in at this time, if you want to take away the device, you can safely remove the device from the computer by operating according to the specifications. This undoubtedly provides great convenience for people's study and life.

Historically, USB technology was invented by Intel's chief system technician Bart. Intel finally decided to open this technology for free, and cooperated with Microsoft, Compaq and other companies to determine it as a general standard interface for computers.

After Pang Xuelin applied for the USB patent, he decided to open it for free, and through Don Valentine's relationship, he lobbled Compaq, Microsoft, Intel and other companies to accept this unified standard interface.

The feedback I received at present is very good. If nothing unexpected happens, the USB interface will appear in the personal computers produced by most computer manufacturers starting next year.

With such a preparation, if Pang Xuelin withdraws from the U disk in the future, no company can bypass the patents he owns from a technical perspective.

By then, HiSilicon Semiconductor can also obtain good returns in the field of memory chips with the success of U disks and form a virtuous cycle between R&D, production and sales.

Of course, Pang Xuelin naturally would not say this to Xia Peisu and Ni Guangnanming now.

Seeing Pang Xuelin's confident look, Xia Peisu opened his mouth and finally said nothing.

In the field of R&D, Xia Peisu has confidence that is better than the young man in front of him.

However, in terms of doing business, Xia Peisu had no say in front of Pang Xuelin.

Haven’t you even publicly claimed that Pang Xuelin is a young entrepreneur leader?

Pang Xuelin's various operations in the Star VD marketing process, and even people like Xia Peisu who are devoted to indulging in the academic field have heard of them.

This shows that Pang Xuelin is popular in China.

At this time, Ni Guangnan said: "Mr. Pang, what do you mean by the second generation of synchronous dynamic random access memory?"

Synchronous dynamic random access memory refers to sdram.

This is a dynamic random access memory (dram) with a synchronous interface.

Usually Dram has an asynchronous interface so that it can respond to changes in control input at any time.

SDram has a synchronization interface, which waits for a clock signal before responding to the control input, so that it can be synchronized with the computer's system bus. The clock is used to drive a finite state machine to perform pipeline operations on incoming instructions.

This allows sdram to have a more complex operating mode compared to asynchronous dram without synchronous interfaces.

Pipeline means that the chip can accept a new instruction before processing the previous instruction. In a write pipeline, the write command can be executed immediately after another instruction is executed without waiting for the time when the data is written to the storage queue. In a read pipeline, the required data arrives after a fixed number of clock frequencies after the read instruction is issued, and this waiting process can issue other additional instructions. This delay is called waiting time, which is a very important parameter when purchasing memory for the computer.

Sdram is widely used in computers, from the initial Sdram to the subsequent generation of DDR, then DD and DD entered the mass market. In 2015, DD entered the consumer market.

What Pang Xuelin needs to do is ddr memory.

The official name of ddr memory is ddr sdram (dual date rate sdram), as the name implies, it is a double-rate sdram. From the name, you know that it is an upgraded version of sdr sdram. Ddr sdram transmits signals at the rising and falling edges of the clock cycle, so that its data transmission speed is twice that of sdr sdram. And doing so will not increase power consumption. As for the addressing and control signals and sdr sdram, they are only transmitted on the rising edge, which is a compromise on the compatibility and performance of the memory controller at that time.

ddr sdram uses a 184pin dimm slot, and the anti-dust gap has changed from two in sdr sdram to one. The common working voltage is 2.5v. The frequency of the first generation of ddr memory was 200mhz. Then, ddr-266, ddr-333 and the mainstream ddr-400 of that era were born. As for those running at 500mhz, 600mhz and 700mhz, they are considered overclocking strips. When the ddr memory first came out, there was only a single channel. Later, a dual-pass chipset appeared, which directly doubled the bandwidth of the memory. If two ddr-400 memory formed a dual channel, it can basically meet the Pentium 4 processor with FSB 800mhz, and the capacity is from 128mb to 1gb.

The ddr memory has achieved a complete victory in the war against rdram, so many motherboard manufacturers chose to launch chipsets that support DDR memory. The motherboard market was quite lively at that time. Not only Intel and Amd were fighting one-on-one, but also manufacturers such as Iidia, via, sis, Ali, ATI, etc., so there are quite a lot of PUs that can use DDR memory. Soket 370's Pentium 3 and Cyron, Soket 478 and LGA 775's Pentium 4, Pentium D, Cyron 4, Cyron D. As long as you want Core 2, you can actually plug into some 865 motherboards to use DDR memory. For Amd, Soket A interface K7 and Soket 939 and Soket 754's K8 architecture products can all use DDR memory.
Chapter completed!